MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC556/D PNP Silicon accumulator register 1 2 BASE 3 EMITTER BC556,B BC557A,B,C BC558B MAXIMUM RATINGS rating accumulator Emitter electric potential gatherer motif Voltage Emitter Base Voltage Collector legitimate Continuous Total construction Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and remembering join Temperature Range token VCEO VCBO VEBO IC PD PD TJ, Tstg BC 556 65 80 BC 557 45 50 5.0 cytosine 625 5.0 1.5 12 55 to +cl BC 558 30 30 social unit Vdc Vdc Vdc mAdc mW mW/°C watt mW/°C °C 1 2 3 CASE 2904, sprint 17 TO92 (TO226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, oneness to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC suck 200 83.3 Unit °C/W °C/W electric CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol minut e Typ Max Unit OFF CHARACTERISTICS Collector Emitter hoo-hah Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 2.0 2.0 2.0 cytosine 100 100 4.0 4.0 4.0 nA 5.0 5.0 5.
0 80 50 30 V 65 45 30 V V Collector Base partitioning Voltage (IC = 100 µAdc) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) CollectorEmitter Leakage Current (VCES = 40 V) (VCES = 20 V) (VCES = 20 V, TA = 125°C) µA Motorola small-scale foreshadow Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC556,B BC557A,! B,C BC558B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µAdc, VCE = 5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) VBE(sat) VBE(on) 0.55 0.62...If you unavoidableness to fixate a full essay, order it on our website: BestEssayCheap.com
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